Wide tunable bandpass filter design based on CMOS active inductor
| dc.contributor | Graduate Program in Electrical and Electronic Engineering. | |
| dc.contributor.advisor | Çiçekoğlu, Oğuzhan. | |
| dc.contributor.author | Sunça, Abdullah. | |
| dc.date.accessioned | 2023-03-16T10:17:51Z | |
| dc.date.available | 2023-03-16T10:17:51Z | |
| dc.date.issued | 2012. | |
| dc.description.abstract | RF bandpass filters being commonly used in wireless communication systems are increasingly being implemented utilizing actively simulated inductors. Implementation of bandpass filters based on active inductors holds a number of alluring characteristics including a high passband center frequency, a large center frequency tuning range, a large and tunable quality factor subsequently a low insertion loss, and a low silicon consumption. The use of active inductors in RF bandpass filters, however, is faced to several tough challenges including poor noise performance, a limited dynamic range, and a high level of power consumption. For the telecommunication applications in the UHF band (300 MHz - 3 GHz), frequency tuning range of the active inductor based bandpass filter implementations in the literature is generally between 1-3 GHz without the usage of external capacitances. LC tank circuits are commonly formed with off-chip capacitances while circuit operation requires below 1 GHz. The desired capacitance value may not be available for achieving an operation in specific frequency and on-chip varactors are used for fine tuning of the inductance value. A large area is required for implementing an onchip varactor which needs to succeed a wide range capacitance tuning. If so, a control voltage is a must for determination of the capacitance value which is a potential burden for the bias requirements of the overall circuitry. The work done in this M.S. thesis is the design of a new wide tunable bandpass filter based on an introduced CMOS active inductor topology which consists of a back-to-back connected transistor pair together with one single transistor utilized for inductance tuning. This gyrator-C network achieves a wide tuning range with introducing an idea for the removal of the use of off-chip and on-chip capacitances by realizing inductance boosting and decaying technique for the selection of the desired frequency. Implemented in TSMC 0.18μm process, the wide tunable active inductor based bandpass filter offers a tuning range between 327 MHz and 2 GHz with a quality factor above 40. | |
| dc.format.extent | 30 cm. | |
| dc.format.pages | xiv, 99 leaves ; | |
| dc.identifier.other | EE 2012 S86 | |
| dc.identifier.uri | https://digitalarchive.library.bogazici.edu.tr/handle/123456789/12805 | |
| dc.publisher | Thesis (M.S.) - Bogazici University. Institute for Graduate Studies in Science and Engineering, 2012. | |
| dc.relation | Includes appendices. | |
| dc.relation | Includes appendices. | |
| dc.subject.lcsh | Electronic circuit design. | |
| dc.subject.lcsh | Low voltage integrated circuits -- Design and construction. | |
| dc.subject.lcsh | Radio circuits -- Design and construction. | |
| dc.title | Wide tunable bandpass filter design based on CMOS active inductor |
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