Detection of optical frequencies of metal-oxide-metal junctions

dc.contributor	Graduate Program in Physics.
dc.contributor.advisor	Skarlatos, Yani.
dc.contributor.author	Yanardağ, Sırma Başak.
dc.date.accessioned	2023-03-16T10:38:01Z
dc.date.available	2023-03-16T10:38:01Z
dc.date.issued	2008.
dc.description.abstract	In this thesis, optoelectronic characteristics of metal-oxide-metal junctions are investigated. The junctions are made of aluminum. The detected current in the Al ¡ Al2O3¡Al films is due to a quantum mechanical phenomena; tunneling. Classically, if the energy of the particle is less than the height of the barrier, the particle can never pass through it. However, in quantum mechanics the electrons can penetrate into a classically forbidden region without any real tunnel even when its energy is smaller than the height of the barrier. The tunneling current depends on the thickness of the insulator, the work function of aluminum, and the applied voltage.
dc.format.extent	30cm.
dc.format.pages	xii, 37 leaves;
dc.identifier.other	PHYS 2008 Y36
dc.identifier.uri	https://digitalarchive.library.bogazici.edu.tr/handle/123456789/13693
dc.publisher	Thesis (M.S.)-Bogazici University. Institute for Graduate Studies in Science and Engineering, 2008.
dc.subject.lcsh	Optoelectronics.
dc.subject.lcsh	Aluminum.
dc.subject.lcsh	Tunneling (Physics)
dc.title	Detection of optical frequencies of metal-oxide-metal junctions

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