Laser assisted growth of silicon nano-structures

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dc.contributorGraduate Program in Physics.
dc.contributor.advisorİnci, Naci.
dc.contributor.authorDemirbaş, Elif.
dc.date.accessioned2023-03-16T10:38:09Z
dc.date.available2023-03-16T10:38:09Z
dc.date.issued2010.
dc.description.abstractIn this study, the aim is to produce homogeneous porous silicon(PS) nanostructures and then to observe the effect of resistivity of starting silicon samples. P-type silicon wafers with di erent resistivity are prepared by different anodization methods. Silicon samples fabricated by the electrochemical dissolution are characterized both optically and structurally. By the highlight of quantum con nement effect, optical characterization method is used to determine whether porous silicon nano-structures occur or not. Porous silicon samples are analysed by the Environmental Scanning Electron Microscopy(ESEM).
dc.format.extent30cm.
dc.format.pagesix, 22 leaves;
dc.identifier.otherPHYS 2010 D46
dc.identifier.urihttps://digitalarchive.library.bogazici.edu.tr/handle/123456789/13712
dc.publisherThesis (M.S.)-Bogazici University. Institute for Graduate Studies in Science and Engineering, 2010.
dc.subject.lcshPorous silicon.
dc.titleLaser assisted growth of silicon nano-structures

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